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Yi-lei Li, Xu-jia Liu, Yun-biao Wang, Ying Liu, Rui-hong Liu, Hui-ying Mu, Ying-juan Hao, Xiao-jing Wang, Fa-tang Li. Constructing interfacial electric field and Zn vacancy modulated ohmic junctions ZnS/NiS for photocatalytic H2 evolution. Green Energy&Environment. doi: 10.1016/j.gee.2023.12.007
Citation: Yi-lei Li, Xu-jia Liu, Yun-biao Wang, Ying Liu, Rui-hong Liu, Hui-ying Mu, Ying-juan Hao, Xiao-jing Wang, Fa-tang Li. Constructing interfacial electric field and Zn vacancy modulated ohmic junctions ZnS/NiS for photocatalytic H2 evolution. Green Energy&Environment. doi: 10.1016/j.gee.2023.12.007
shu

Constructing interfacial electric field and Zn vacancy modulated ohmic junctions ZnS/NiS for photocatalytic H2 evolution

doi: 10.1016/j.gee.2023.12.007

  • a. Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, China;

  • b. Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China

Funds:

This work was financially supported by the Natural National Science Foundation of China (22178084), the Natural Science Foundation for Distinguished Young Scholars of Hebei Province (No. B2015208010), and Fundamental Research Funds for the Central Universities, the Foundation for Innovative Research Groups of the Natural Science Foundation of Hebei Province (No. B2021208005). National Key R&D Program of China (2022YFE0101800).

  • Received date 19 August 2023, Accepted date 29 December 2023, RevRecd date 03 November 2023
    Abstract
  • Adjusting the interfacial transport efficiency of photogenerated electrons and the free energy of hydrogen adsorption through interface engineering is an effective means of improving the photocatalytic activity of semiconductor photocatalysts. Herein, hollow ZnS/NiS nanocages with ohmic contacts containing Zn vacancy (VZn-ZnS/NiS) are synthesized using ZIF-8 as templates. An internal electric field is constructed by Fermi level flattening to form ohmic contacts, which increase donor density and accelerate electron transport at the VZn-ZnS/NiS interface. The experimental and DFT results show that the tight interface and VZn can rearrange electrons, resulting in a higher charge density at the interface, and optimizing the Gibbs free energy of hydrogen adsorption. The optimal hydrogen production activity of VZn-ZnS/NiS is 10636 μmol h-1 g-1, which is 31.9 times that of VZn-ZnS. This study provides an idea for constructing sulfide heterojunctions with ohmic contacts and defects to achieve efficient photocatalytic hydrogen production.

     

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