Volume 8 Issue 1
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Wei Wang, Yiling Xie, Fangfang He, Yuan Wang, Weinan Xue, Yan Li. Efficient quantum dot sensitized solar cells via improved loading amount management. Green Energy&Environment, 2023, 8(1): 213-223. doi: 10.1016/j.gee.2021.04.002
Citation: Wei Wang, Yiling Xie, Fangfang He, Yuan Wang, Weinan Xue, Yan Li. Efficient quantum dot sensitized solar cells via improved loading amount management. Green Energy&Environment, 2023, 8(1): 213-223. doi: 10.1016/j.gee.2021.04.002
shu

Efficient quantum dot sensitized solar cells via improved loading amount management

doi: 10.1016/j.gee.2021.04.002

  • Key Laboratory for Advanced Materials, Shanghai Key Laboratory of Functional Materials Chemistry, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China

Funds:

This research is supported by the State Key Research Development Program of China (Grant 2016YFA0204200), the National Natural Science Foundation of China (Grant 21771063 and 21975075), the Fundamental Research Funds for the Central Universities in China (Grant 222201717003), and the Fellowship of China Postdoctoral Science Foundation (No. 2020M681207).

  • Received date 07 January 2021, Accepted date 02 April 2021, RevRecd date 31 March 2021, Publish date 06 April 2021,
    Abstract
  • High light-harvesting efficiency and low interfacial charge transfer loss are essential for the fabrication of high-efficiency quantum dot-based solar cells (QDSCs). Increasing the thickness of mesoporous TiO2 films can improve the loading of pre-synthesized QDs on the film and enhance the absorbance of photoanode, but commonly accompanied by the increase in the unfavorable charge recombination due to prolonged electron transmission paths. Herein, we systematically studied the influence of the balance between QD loading and TiO2 film thickness on the performance of QDSCs. It is found that the relative thin photoanode prepared by the cationic surfactant-assisted multiple deposition procedure has achieved a high QD loading which is comparable to that of the thick photoanode commonly used. Under AM 1.5G illumination, Zn-Cu-In-Se and Zn-Cu-In-S based QDSCs with optimized 11.8 μm photoanodes show the PCE of 10.03% and 8.53%, respectively, which are comparable to the corresponding highest PCE of Zn-Cu-In-Se and Zn-Cu-In-S QDSCs (9.74% and 8.75%) with over 25.0 μm photoanodes. Similarly, an impressive PCE of 6.14% was obtained for the CdSe based QDSCs with a 4.1 μm photoanode, which is slightly lower than the best PCE (7.05%) of reference CdSe QDSCs with 18.1 μm photoanode.

     

    • • The relative thin photoanode with a high QD loading has been prepared by a multiple deposition procedure. • With 11.8 μm photoanodes, Zn-Cu-In-Se and Zn-Cu-In-S based QDSCs show the best PCE of 10.03% and 8.53%, respectively. • An impressive PCE of 6.14% for the optimized CdSe based QDSCs with a 4.1 μm photoanode was obtained.
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