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Article Navigation >  Green Energy&Environment  > 2018  >  3(3): 239-246
Tian Xie, Tao Zheng, Ruiling Wang, Yuyu Bu, Jin-Ping Ao. Fabrication of CuOx thin-film photocathodes by magnetron reactive sputtering for photoelectrochemical water reduction. Green Energy&Environment, 2018, 3(3): 239-246. doi: 10.1016/j.gee.2018.01.003
Citation: Tian Xie, Tao Zheng, Ruiling Wang, Yuyu Bu, Jin-Ping Ao. Fabrication of CuOx thin-film photocathodes by magnetron reactive sputtering for photoelectrochemical water reduction. Green Energy&Environment, 2018, 3(3): 239-246. doi: 10.1016/j.gee.2018.01.003
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Fabrication of CuOx thin-film photocathodes by magnetron reactive sputtering for photoelectrochemical water reduction

doi: 10.1016/j.gee.2018.01.003
  • a.

    Institute of Technology and Science, Tokushima University, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan

  • b.

    National Institute of Technology, Anan College, 265 Aoki Minobayashi, Anan, Tokushima 774-0017, Japan

  • c.

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

More Information
  • Corresponding author: E-mail address: buyuyuqust@163.com (Yuyu Bu); E-mail address: jpao@ee.tokushima-u.ac.jp (Jin-Ping Ao)
  • Received date 10 November 2017, Accepted date 11 January 2018, RevRecd date 09 January 2018, Available online 02 February 2018, Publish date 31 July 2018,
    Abstract
  • The CuOx thin film photocathodes were deposited on F-doped SnO2 (FTO) transparent conducting glasses by alternating current (AC) magnetron reactive sputtering under different Ar:O2 ratios. The advantage of this deposited method is that it can deposit a CuOx thin film uniformly and rapidly with large scale. From the photoelectrochemical (PEC) properties of these CuOx photocathodes, it can be found that the CuOx photocathode with Ar/O2 30:7 provide a photocurrent density of −3.2 mA cm−2 under a bias potential −0.5 V (vs. Ag/AgCl), which was found to be twice higher than that of Ar/O2 with 30:5. A detailed characterization on the structure, morphology and electrochemical properties of these CuOx thin film photocathodes was carried out, and it is found that the improved PEC performance of CuOx semiconductor photocathode with Ar/O2 30:7 attributed to the less defects in it, indicating that this Ar/O2 30:7 is an optimized condition for excellent CuOx semiconductor photocathode fabrication.

     

    • • CuOx thin film photocathodes prepared by a simple magnetron sputtering method. • CuOx thin film with gas ratio 30:7 display much better photoelectrochemical performance. • Higher impedance value and fewer defects can improve the performance of CuOx thin film.
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    • References(32)
  • [1]
    J.Cen, Q.Wu, M.Liu, et al. Green Energy Environ., 2 (2017),pp. 100-111
    [2]
    S.K.Mohapatra, S.E.John, S.Banerjee, et al. Chem. Mater., 21 (2009),pp. 3048-3055
    [3]
    S.W.Boettcher, J.M.Spurgeon, M.C.Putnam, et al. Science, 327 (2010),pp. 185-187
    [4]
    Y.Lin, S.Zhou, S.W.Sheehan, et al. J. Am. Chem. Soc., 133 (2011),pp. 2398-2401
    [5]
    Y.Lin, G.Yuan, S.Sheehan, et al. Energy Environ. Sci., 4 (2011),pp. 4862-4869
    [6]
    B.Klahr, S.Gimenez, F.Fabregat-Santiago, et al. J. Am. Chem. Soc., 134 (2012),pp. 16693-16700
    [7]
    B.Seger, A.B.Laursen, P.C.K.Vesborg, et al. Angew. Chem. Int. Ed., 51 (2012),pp. 9128-9131
    [8]
    Y.W.Chen, J.D.Prange, S.Dühnen, et al. Nat. Mater., 10 (2011),pp. 539-544
    [9]
    Y.Bu, J.P.Ao Green Energy Environ., 2 (2017),pp. 331-362
    [10]
    F.Le Formal, N.Tétreault, M.Cornuz, et al. Chem. Sci., 2 (2011),pp. 737-743
    [11]
    M.Barroso, A.J.Cowan, S.R.Pendlebury, et al. J. Am. Chem. Soc., 133 (2011),pp. 14868-14871
    [12]
    Y.F.Lim, C.S.Chua, C.J.J.Lee, et al. Phys. Chem. Chem. Phys., 16 (2014),pp. 25928-25934
    [13]
    Y.Yang, D.Xu, Q.Wu, et al. Sci. Rep., 6 (2016),p. 35158
    [14]
    C.Li, T.Hisatomi, O.Watanabe, et al. Energy Environ. Sci., 8 (2015),pp. 1493-1500
    [15]
    A.Paracchino, V.Laporte, K.Sivula, et al. Nat. Mater., 10 (2011),pp. 456-461
    [16]
    G.Liu, S.Ye, P.Yan, et al. Energy Environ. Sci., 9 (2016),pp. 1327-1334
    [17]
    T.W.Kim, K.S.Choi Science, 343 (2014),pp. 990-994
    [18]
    Y.H.Ng, A.Iwase, A.Kudo, et al. J. Phys. Chem. Lett., 1 (2010),pp. 2607-2612
    [19]
    M.Higashi, R.Abe, T.Takata, et al. Chem. Mater., 21 (2009),pp. 1543-1549
    [20]
    V.Cristino, S.Caramori, R.Argazzi, et al. Langmuir, 27 (2011),pp. 7276-7284
    [21]
    A.Kay, I.Cesar, M.Grätzel J. Am. Chem. Soc., 128 (2006),pp. 15714-15721
    [22]
    K.Sivula, F.Le Formal, M.Grätzel ChemSusChem, 4 (2011),pp. 432-449
    [23]
    A.A.Dobale, A.G.Tamirat, H.M.Chen, et al. J. Mater. Chem. A, 4 (2016),pp. 2205-2216
    [24]
    Q.Huang, F.Kang, H.Liu, et al. J. Mater. Chem. A, 1 (2013),pp. 2418-2425
    [25]
    Z.Zhang, P.Wang J. Mater. Chem., 22 (2012),pp. 2456-2464
    [26]
    K.Nakaoka, J.Ueyama, K.Ogura J. Electrochem. Soc., 151 (2004),pp. C661-C665
    [27]
    N.Mukherjee, B.Show, S.K.Maji, et al. Mater. Lett., 65 (2011),pp. 3248-3250
    [28]
    Y.Bessekhouad, D.Robert, J.-V.Weber Catal. Today, 101 (2005),pp. 315-321
    [29]
    S.Masudy-Panah, R.S.Moakhar, C.S.Chua, et al. ACS Appl. Mater. Interfaces, 8 (2016),pp. 1206-1213
    [30]
    G.Malandrino, S.T.Finocchiaro, R.L.Nigro, et al. Chem. Mater., 16 (2004),pp. 5559-5561
    [31]
    Y.Yang, Y.Li, M.Pritzker Electrochim. Acta, 213 (2016),pp. 225-235
    [32]
    G.K.Dalapati, S.Masudy-Panah, A.Kumar, et al. Sci. Rep., 5 (2015),p. 17810
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